Subjects: Geosciences >> Space Physics submitted time 2017-01-22
Abstract： SET effect has become an important factor to threaten the reliability of spacecraft. In this paper, the effects of different irradiation positions, different laser energy and different laser focusing depth on SET pulse are measured. According to the worst case, the Hspice circuit level simulation is carried out to study the effect of different parameters on the SET pulse. In the end, the effect of the Suppressor is verified.
Peer Review Status:
Awaiting Review
Subjects: Geosciences >> Space Physics submitted time 2016-05-13
Abstract： Russia's Mars probe Phobos-Grunt together with China's first Mars probe Yinghuo-1 were launched into Low Earth Orbit (LEO) on November 9, 2011. Unfortunately, the main probe failed to fire its thrusters and transfer its orbit as planned after 159 minutes, eventually the trip to Mars was terminated. The most likely cause of the accident investigated by Russian Space Agency (RSA) was that RAM chips in onboard control computers worked wrong when hit by cosmic heavy charged particles, which sequently led to the two computers restart and eventually disturbed the probe totally. However experts on satellite radiation hardness casted lot of doubt on the statement that LEO probe can be effected by Single-Event Effects (SEE) resulting from space radiation particles in so short period of time. Based on information of the victim RAM components disclosed by RSA, experiment tests and calculations were performed for K6R4016V1D chip to predict SEE rate when applied in LEO. Finally, possibility for SEE to cause the failure of Phobos-Grunt probe was discussed.
Peer Review Status:Awaiting Review
Subjects: Geosciences >> Space Physics submitted time 2016-05-03
Abstract： The pulsed laser facility for single event upset(SEU)sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256.To avoid the block of the metal layer in the front side of integrated circuit,the backside testing method was used.The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell.The SEU sensitivity mapping could be used to construct the corresponding SEU cross section,which is validated by the heavy ion beam test result.
Peer Review Status:Awaiting Review
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