分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
ZHANG Zhan-Gang
LIU Jie
HOU Ming-Dong
SUN You-Mei
SU Hong
GU Song
GENG Chao
YAO Hui-Jun
LUO Jie
DUAN Jing-Lai
MO Dan
XI Kai
EN Yun-Fei
摘要： Experimental evidence is presented showing obvious azimuthal dependence of single event upsets (SEU) and multiple-bit upset (MBU) patterns in radiation hardened by design (RHBD) and MBU-sensitive static random access memories (SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell (DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence. Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths (L-shaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs. During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
WANG Xiao-Hui
TONG Teng
SU Hong
LIU Jie
ZHANG Zhan-Gang
GU Song
LIU Tian-Qi
KONG Jie
ZHAO Xing-Wen
YANG Zhen-Lei
摘要： Single event effects (SEEs) induced by radiations become a significant reliability challenge for modern electronic systems. To evaluate SEEs susceptibility for microelectronic devices and integrated circuits (ICs), an SEE testing system with flexibility and robustness was developed at Heavy Ion Research Facility in Lanzhou (HIRFL). The system is compatible with various types of microelectronic devices and ICs, and supports plenty of complex and high-speed test schemes and plans for the irradiated devices under test (DUTs). Thanks to the combination of meticulous circuit design and the hardened logic design, the system has additional performances to avoid an overheated situation and irradiations by stray radiations. The system has been tested and verified by experiments for irradiating devices at HIRFL.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
ZHAO Xing-Wen
QIAN Yi
KONG Jie
SU Hong
DU Zhong-Wei
ZHANG Xue-Heng
YAN Duo
LI Zhan-Kui
LI Hai-Xia
WANG Xiao-Hui
TONG Teng
摘要： A readout electronics has been developed for the silicon strip array detector system of HIRFL-CSR-ETF. It consists of 48 front end electronics (FEE) boards, 12 PXI-DAQ boards and one trigger board. It can implement energy and time measurements of 4608 channels. Each FEE board is based on 6 ASICs (ATHED), which implements energy and time measurements of 96 channels. The PXI-DAQ board meets requirements of high-speed counting and amount of readout channels and can process signals of 4 FEEs. The trigger board is developed to select the valid events. The energy linearity of the readout electronics is better than 0.3% in the dynamic range of 0.10.7 V. In the test with a standard triple alpha source, the energy resolution was 1.8% at 5.48 MeV. This readout electronics enables the silicon strip array system to identify particles of A 14.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要： Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10-11 cm2/bit, two orders of magnitude higher than that without ECC (at the order of 10-9 cm2/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要： Gamma Ray Array Detector (GRAD) is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). The trigger subsystem of GRAD is required to make a fast L1 trigger decision with a fixed latency for the data acquisition. Because the hit signals from the detector are asynchronous with the local clock of the trigger system, a nondeterministic latency (the value changes between zero and one clock period) is generated when the synchronous receivers of the conventional trigger system process the hit signals. In this paper, an improved trigger logic based on a field-programmable gate array is developed, and comprised of zero-delay broadening circuits as receivers and an improved adding circuit designed for the new receivers. Software simulation and experimental measurement have been conducted. Comparison with the conventional trigger logic, the improved trigger logic has the advantage of eliminating the nondeterministic latency and reducing the total processing latency.
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