分类： 材料科学 >> 纳米科学和纳米技术 提交时间： 2016-12-22
Zhili Zhang
Kai Fu
Xuguang Deng
Xiaodong Zhang
Yaming Fan
Shichuang Sun
Liang Song
Zheng Xing
Wei Huang
Guohao Yu
Yong Cai
Baoshun Zhang
摘要： This paper presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal insulator semiconductor high electron-mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low pressure chemical vapor deposition (LPCVD) silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation damage. The E-mode MIS-HEMTs exhibit a threshold voltage as high as 3.3 V with a maximum drain current over 200 mA/mm (250 mA/mm for depletion-mode (D-mode) MIS-HEMTs) and a high on/off current ratio of 109. Meanwhile, the E-mode MIS-HEMTs dynamic RON is only 1.53 times than the static RON after off-state VDS stress of 500 V.
分类： 材料科学 >> 纳米科学和纳米技术 提交时间： 2016-12-22
摘要： An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates was obtained with 18 nm Si3N4 grown by low pressure chemical vapor deposition (LPCVD) as gate insulator, The MIS-HEMTs show high Idss of 16.8 A@Vg=3 V, high breakdown voltage of 600 V and a low specific on-resistance of 2.3. The power device figure of merit V2BV/Ron=157MW·cm-2. Furthermore, the good insulation effects of LPCVD-Si3N4 were also demonstrated by the low gate leakage current of below Ig=154 nA@Vds=600 V and Vgs=-14 V. The high Idss, low specific on-resistance and high breakdown voltage show the potential and advantages of GaN MIS-HEMTs for power switching applications.
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