分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
WANG Xiao-Hui
TONG Teng
SU Hong
LIU Jie
ZHANG Zhan-Gang
GU Song
LIU Tian-Qi
KONG Jie
ZHAO Xing-Wen
YANG Zhen-Lei
摘要： Single event effects (SEEs) induced by radiations become a significant reliability challenge for modern electronic systems. To evaluate SEEs susceptibility for microelectronic devices and integrated circuits (ICs), an SEE testing system with flexibility and robustness was developed at Heavy Ion Research Facility in Lanzhou (HIRFL). The system is compatible with various types of microelectronic devices and ICs, and supports plenty of complex and high-speed test schemes and plans for the irradiated devices under test (DUTs). Thanks to the combination of meticulous circuit design and the hardened logic design, the system has additional performances to avoid an overheated situation and irradiations by stray radiations. The system has been tested and verified by experiments for irradiating devices at HIRFL.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
ZHAO Xing-Wen
QIAN Yi
KONG Jie
SU Hong
DU Zhong-Wei
ZHANG Xue-Heng
YAN Duo
LI Zhan-Kui
LI Hai-Xia
WANG Xiao-Hui
TONG Teng
摘要： A readout electronics has been developed for the silicon strip array detector system of HIRFL-CSR-ETF. It consists of 48 front end electronics (FEE) boards, 12 PXI-DAQ boards and one trigger board. It can implement energy and time measurements of 4608 channels. Each FEE board is based on 6 ASICs (ATHED), which implements energy and time measurements of 96 channels. The PXI-DAQ board meets requirements of high-speed counting and amount of readout channels and can process signals of 4 FEEs. The trigger board is developed to select the valid events. The energy linearity of the readout electronics is better than 0.3% in the dynamic range of 0.10.7 V. In the test with a standard triple alpha source, the energy resolution was 1.8% at 5.48 MeV. This readout electronics enables the silicon strip array system to identify particles of A 14.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要： Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10-11 cm2/bit, two orders of magnitude higher than that without ECC (at the order of 10-9 cm2/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results.
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