分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
ZHANG Zhan-Gang
LIU Jie
HOU Ming-Dong
SUN You-Mei
SU Hong
GU Song
GENG Chao
YAO Hui-Jun
LUO Jie
DUAN Jing-Lai
MO Dan
XI Kai
EN Yun-Fei
摘要： Experimental evidence is presented showing obvious azimuthal dependence of single event upsets (SEU) and multiple-bit upset (MBU) patterns in radiation hardened by design (RHBD) and MBU-sensitive static random access memories (SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell (DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence. Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths (L-shaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs. During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
WANG Xiao-Hui
TONG Teng
SU Hong
LIU Jie
ZHANG Zhan-Gang
GU Song
LIU Tian-Qi
KONG Jie
ZHAO Xing-Wen
YANG Zhen-Lei
摘要： Single event effects (SEEs) induced by radiations become a significant reliability challenge for modern electronic systems. To evaluate SEEs susceptibility for microelectronic devices and integrated circuits (ICs), an SEE testing system with flexibility and robustness was developed at Heavy Ion Research Facility in Lanzhou (HIRFL). The system is compatible with various types of microelectronic devices and ICs, and supports plenty of complex and high-speed test schemes and plans for the irradiated devices under test (DUTs). Thanks to the combination of meticulous circuit design and the hardened logic design, the system has additional performances to avoid an overheated situation and irradiations by stray radiations. The system has been tested and verified by experiments for irradiating devices at HIRFL.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要： Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10-11 cm2/bit, two orders of magnitude higher than that without ECC (at the order of 10-9 cm2/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results.
分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要： The Dark Matter Particle Explorer (DAMPE) is being constructed as a scientific satellite to observe high energy cosmic rays in space. As a crucial detector of DAMPE, the BGO calorimeter consists of 1848 PMT dynode signals which bring difficulties in front-end electronics on the space-limited and power-limited satellite platform. To overcome the challenge, a low-noise, low-power and high-integration ASIC chip, named VA32HDR14.2, is taken into account. In order to evaluate the radiation tolerance of the chip in space radiation environment, both single event effect (SEE) and total ionizing dose (TID) tests were performed. The SEE test result shows that the effective linear energy transfer (LET) threshold of single event latch-up (SEL) of the chip is around 23.0 MeV-cm2/mg, which is relatively sensitive, thus protection methods must be taken in the electronics design. The TID test result shows that the TID performance of the chip is higher than 25 Krad(Si), which satisfies the design specification.
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