分类： 光学 >> 量子光学 提交时间： 2023-02-19
摘要： The past decade has seen a proliferation of topological materials for both insulators and semimetals in electronic systems and classical waves. Topological semimetals exhibit topologically protected band degeneracies, such as nodal points and nodal lines. Dirac nodal line semimetals (DNLS), which own four-fold line degeneracy, have drawn particular attention. DNLSs have been studied in electronic systems but there is no photonic DNLS. Here in this work, we provide a new mechanism which is unique for photonic systems to investigate a stringent photonic DNLS. When truncated, the photonic DNLS exhibits double-bowl states (DBS), which comprises two sets of perpendicularly polarized surface states. In sharp contrast to nondegenerate surface states in other photonic systems, here the two sets of surface states are almost degenerate over the whole spectrum range. The DBS and the bulk Dirac nodal ring (DNR) dispersion along the relevant directions, are experimentally resolved.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Linlin Shi
Ning Li
Ting Ji
Ye Zhang
Wenyan Wang
Lin Feng
Rong Wen
Yuying Hao
Kaiying Wang
Furong Zhu
Guohui Li
Beng S. Ong
Yanxia Cui
摘要： Organic photodetectors (OPDs) possess bright prospects in applications of medical imaging and wearable electronics due to the advantages such as low cost, good biocompatibility, and good flexibility. Photomultiplication OPDs (PM-OPDs) enabled by the trap-assisted carrier tunneling injection effect exhibit external quantum efficiencies far greater than unity, thus the acquired responsivities are extremely high. However, the reported PM-OPDs with high responsivity performances are all accompanied by high dark currents due to the introduction of carrier traps, which inevitably results in inferior detectivities. In this work, we modify a P3HT:PCBM donor-rich PM-OPD by introducing an atomically thin Al2O3 interfacial layer through the ALD technique, obtaining a high responsivity of 8294 A/W and high detectivity of 6.76*10^14 Jones, simultaneously, both of which are among the highest reported for bulk heterojunction PM-OPDs. Ascribed to the introduction of the atomically thin Al2O3 layer, the metal-insulator-semiconductor (MIS) tunneling junction is formed, which brings forward a suppressed dark current along with an increased amounts of holes tunneling under forward bias. Meanwhile, the weak light detection limit of the modified PM-OPD within the linear response range reaches the level of nW/cm2. Based on the proposed PM-OPD, a proof-of-concept image sensor with 26*26 pixels is demonstrated, which can respond to both ultraviolet light and visible light. The PM-OPD based sensor arrays can find broad applications for medical imaging, wearable electronics, etc.
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