Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions

分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》

TONG Teng WANG Xiao-Hui ZHANG Zhan-Gang DING Peng-Cheng LIU Jie LIU Tian-Qi SU Hong

摘要： Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10-11 cm2/bit, two orders of magnitude higher than that without ECC (at the order of 10-9 cm2/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results.

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