Effect of defects on magnetic properties of O+-implanted AlN films by positron annihilation spectroscopy

分类： 核科学技术 >> 辐射物理与技术 提交时间： 2024-04-07

Run YE Bangjiao YE

摘要： Room-temperature ferromagnetism is observed in the O+-implanted AlN films with O+ doses of 5 × 1016 cm-2 (AlN:O5×1016) and 2 × 1017 cm-2 (AlN:O2×1017). The observed magnetic anisotropy indicate that the ferromagnetism is attributed to the intrinsic properties of O+-implanted AlN films. The out-of-plane saturation magnetization (𝑀S) of the AlN:O5×1016 is about 0.68 emu/g, much higher than that of AlN:O2×1017, 0.09 emu/g, which is due to the excessively high O+ dose made more O+ ions occupy adjacent Al3+ positions in forms of antiferromagnetic coupling. Doppler broadening of positron annihilation radiation measurements demonstrate the existence of Al vacancies in the O+-implanted AlN films. The first-principles calculations suggest that the ferromagnetism originates mainly from the Al vacancies. 

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