分类： 光学 >> 量子光学 提交时间： 2023-02-19
Yuan Zhou
Zhe Wang
Zhiwei Fang
Zhaoxiang Liu
Haisu Zhang
Difeng Yin
Youting Liang
Zhihao Zhang
Jian Liu
Ting Huang
Rui Bao
Rongbo Wu
Jintian Lin
Min Wang
Ya Cheng
摘要： We demonstrate an on-chip Yb3+-doped lithium niobate (LN) microdisk laser. The intrinsic quality factors of the fabricated Yb3+-doped LN microdisk resonator are measured up to 3.79x10^5 at 976 nm wavelength and 1.1x10^6 at 1514 nm wavelength. The multi-mode laser emissions are obtained in a band from 1020 nm to 1070 nm pumped by 984 nm laser and with the low threshold of 103 {\mu}W, resulting in a slope efficiency of 0.53% at room temperature. Furthermore, the second-harmonic frequency of pump light and the sum-frequency of the pump light and laser emissions are both generated in the on-chip Yb3+-doped LN microdisk benefited from the strong \c{hi}(2) nonlinearity of LN. These microdisk lasers are expected to contribute to the high-density integration of LNOI-based photonic chip.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Renhong Gao
Jianglin Guan
Ni Yao
Li Deng
Jintian Lin
Min Wang
Lingling Qiao
Zhenhua Wang
Youting Liang
Yuan Zhou
Ya Cheng
摘要： We report an on-chip single mode microlaser with low-threshold fabricated on Erbium doped lithium niobate on insulator (LNOI). The single mode laser emission at 1550.5 nm wavelength is generated in a coupled photonic molecule, which is facilitated by Vernier effect when pumping the photonic molecule at 970 nm. A threshold pump power as low as 200 uW is demonstrated thanks to the high quality factor above 10^6. Moreover, the linewidth of the microlaser reaches 4 kHz, which is the best result in LNOI microlasers. Such single mode micro-laser lithographically fabricated on chip is highly in demand by photonic community.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Youting Liang
Junxia Zhou
Rongbo Wu
Zhiwei Fang
Zhaoxiang Liu
Shupeng Yu
Difeng Yin
Haisu Zhang
Yuan Zhou
Jian Liu
Zhenhua Wang
Min Wang
Ya Cheng
摘要： We overcome the difficulty in realizing a monolithic waveguide-coupled microring laser integrated on erbium-doped thin film lithium niobate (Er: TFLN) using photolithography assisted chemo-mechanical etching (PLACE) technique. We demonstrate an integrated single-frequency microring laser operating around 1531 nm wavelength. The PLACE technique, enabling integrated Er: TFLN photonics with low propagation loss, can thus be used to realize low cost mass production of monolithic on-chip microlasers with applications ranging from optical communication and photonic integrated circuit (PIC) to precision metrology and large-scale sensing.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Rongbo Wu
Lang Gao
Youting Liang
Yong Zheng
Junxia Zhou
Hongxin Qi
Difeng Yin
Min Wang
Zhiwei Fang
Ya Cheng
摘要： Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Zhihao Zhang
Zhiwei Fang
Junxia Zhou
Youting Liang
Yuan Zhou
Zhe Wang
Jian Liu
Ting Huang
Rui Bao
Jianping Yu
Haisu Zhang
Min Wang
Ya Cheng
摘要： We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Youting Liang
Junxia Zhou
Zhaoxiang Liu
Haisu Zhang
Zhiwei Fang
Yuan Zhou
Difeng Yin
Jintian Lin
Jianping Yu
Rongbo Wu
Min Wang
Ya Cheng
摘要： Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode and moderate propagation loss, gain and power scaling in such integrated micro-to-nanoscale devices prove to be more challenging compared to their bulk counterparts. In this work, stimulated by the prevalent success of double-cladding optical fiber in high-gain/power operation, a Ta2O5 cladding is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemomechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ~980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
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