Subjects: Nuclear Science and Technology >> Nuclear Detection Technology and Nuclear Electronics submitted time 2023-06-18 Cooperative journals: 《Nuclear Science and Techniques》
ZHANG Zhan-Gang
LIU Jie
HOU Ming-Dong
SUN You-Mei
SU Hong
GU Song
GENG Chao
YAO Hui-Jun
LUO Jie
DUAN Jing-Lai
MO Dan
XI Kai
EN Yun-Fei
Abstract： Experimental evidence is presented showing obvious azimuthal dependence of single event upsets (SEU) and multiple-bit upset (MBU) patterns in radiation hardened by design (RHBD) and MBU-sensitive static random access memories (SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell (DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence. Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths (L-shaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs. During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.
Subjects: Nuclear Science and Technology >> Nuclear Detection Technology and Nuclear Electronics submitted time 2023-06-18 Cooperative journals: 《Nuclear Science and Techniques》
WANG Xiao-Hui
TONG Teng
SU Hong
LIU Jie
ZHANG Zhan-Gang
GU Song
LIU Tian-Qi
KONG Jie
ZHAO Xing-Wen
YANG Zhen-Lei
Abstract： Single event effects (SEEs) induced by radiations become a significant reliability challenge for modern electronic systems. To evaluate SEEs susceptibility for microelectronic devices and integrated circuits (ICs), an SEE testing system with flexibility and robustness was developed at Heavy Ion Research Facility in Lanzhou (HIRFL). The system is compatible with various types of microelectronic devices and ICs, and supports plenty of complex and high-speed test schemes and plans for the irradiated devices under test (DUTs). Thanks to the combination of meticulous circuit design and the hardened logic design, the system has additional performances to avoid an overheated situation and irradiations by stray radiations. The system has been tested and verified by experiments for irradiating devices at HIRFL.
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