分类: 核科学技术 >> 核探测技术与核电子学 提交时间: 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要: Single event effects (SEEs) induced by radiations become a significant reliability challenge for modern electronic systems. To evaluate SEEs susceptibility for microelectronic devices and integrated circuits (ICs), an SEE testing system with flexibility and robustness was developed at Heavy Ion Research Facility in Lanzhou (HIRFL). The system is compatible with various types of microelectronic devices and ICs, and supports plenty of complex and high-speed test schemes and plans for the irradiated devices under test (DUTs). Thanks to the combination of meticulous circuit design and the hardened logic design, the system has additional performances to avoid an overheated situation and irradiations by stray radiations. The system has been tested and verified by experiments for irradiating devices at HIRFL.
分类: 核科学技术 >> 核探测技术与核电子学 提交时间: 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要: Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10-11 cm2/bit, two orders of magnitude higher than that without ECC (at the order of 10-9 cm2/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results.