Transient Characteristics for Proton Gating in Laterally Coupled Indium-Zinc-Oxide Transistors

作者： Liu, N ^{Liu, Ning} Zhu, LQ ^{Zhu, Li Qiang} Xiao, H ^{Xiao, Hui} Wan, CJ ^{Wan, Chang Jin} Liu, YH ^{Liu, Yang Hui} Chao, JY ^{Chao, Jin Yu}
作者单位：

1. Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
提交时间：2017-03-30 12:30:49

摘要: The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processi

THIN-FILM?TRANSISTORS ?FIELD-EFFECT?TRANSISTORS ?SYNAPTIC PLASTICITY ?SUPERCONDUCTIVITY ?MECHANISMS ?INSULATOR

期刊： ACS APPLIED MATERIALS & INTERFACES
分类： 材料科学 >> 材料科学（综合）
引用： ChinaXiv:201703.00935 (或此版本 ChinaXiv:201703.00935V1)
DOI:10.12074/201703.00935V1
CSTR:32003.36.ChinaXiv.201703.00935.V1
推荐引用方式： Liu, N,Zhu, LQ,Xiao, H,Wan, CJ,Liu, YH,Chao, JY.(2017).Transient Characteristics for Proton Gating in Laterally Coupled Indium-Zinc-Oxide Transistors.ACS APPLIED MATERIALS & INTERFACES.[ChinaXiv:201703.00935] (点此复制)

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2017-03-30 12:30:49

ChinaXiv:201703.00935V1

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