摘要: Proton-conducting graphene oxide electrolyte films with very high electric-double-layer capacitance are used as the gate dielectrics for oxide-based neuron transistor fabrication. Paired-pulse facilitation, dendritic integration, and orientation tuning ar
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期刊:
ADVANCED MATERIALS
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分类:
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引用:
ChinaXiv:201705.00341
(或此版本
ChinaXiv:201705.00341V1)
DOI:10.12074/201705.00341V1
CSTR:32003.36.ChinaXiv.201705.00341.V1
- 推荐引用方式:
Wan, CJ [Wan, Chang Jin][ 1,2,3 ],Zhu, LQ [Zhu, Li Qiang][ 3 ],Liu, YH [Liu, Yang Hui][ 3 ],Feng, P [Feng, Ping][ 1,2 ],Liu, ZP [Liu, Zhao Ping][ 3 ],Cao, HL [Cao, Hai Liang][ 3 ],Xiao, P [Xiao, Peng][ 3 ],Shi, Y [Shi, Yi][ 1,2 ],Wan, Q [Wan, Qing][ 1,2,3 ].(2017).Proton-Conducting Graphene Oxide-Coupled Neuron Transistors for Brain-Inspired Cognitive Systems.ADVANCED MATERIALS.[ChinaXiv:201705.00341]
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