分类： 物理学 >> 核物理学 提交时间： 2023-12-06
摘要： In these proceedings, the polarization effects of a strongly magnetized quark-gluon plasma are studied atfinite temperature. It is found that a background magnetic field can have a strong effect on the photon and dilepton emissionrates. It affects not only the total rate but also the angular dependence. In particular, the Landau-level quantizationleads to a nontrivial momentum dependence of the photon/dilepton ellipticity coefficient on transverse momentum. Itis proposed that the anisotropy of the photon and dilepton emission may serve as indirect measurements of the magneticfield.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 * 4096 pixels, each of 15 {\mu}m in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 * 99 pixels, are chosen for the experiment. The readout noise, conversion gain and energy resolutions of the individual pixels in these areas are measured from a large number (more than 25,000) of X-ray events accumulated for each of the pixels through long time exposures. The energy resolution of these pixels can reach 140 eV at 6.4 keV at room temperature and shows a significant positive correlation with the readout noise. The accurate gain can also be derived individually for each of the pixels from its X-ray spectrum obtained. Variations of the gain values are found at a level of 0.56% statistically among the 30 thousand pixels in the areas studied. With the gain of each pixel determined accurately, a precise gain correction is performed pixel by pixel in these areas, in contrast to the standardized ensemble gain used in the conventional method. In this way, we could almost completely eliminate the degradation of energy resolutions caused by gain variations among pixels. As a result, the energy resolution at room temperature can be significantly improved to 124.6 eV at 4.5 keV and 140.7 eV at 6.4 keV. This pixel-by-pixel gain correction method can be applied to all kinds of CMOS sensors, and is expected to find interesting applications in X-ray spectroscopic observations in the future.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate, higher radiation tolerance, and higher working temperature. In this work, we investigate the performance at the individual pixel level of a large-format sCMOS sensor, GSENSE1516BSI, which has 4096 * 4096 pixels, each of 15 {\mu}m in size. To achieve this, three areas on the sCMOS sensor, each consisting of 99 * 99 pixels, are chosen for the experiment. The readout noise, conversion gain and energy resolutions of the individual pixels in these areas are measured from a large number (more than 25,000) of X-ray events accumulated for each of the pixels through long time exposures. The energy resolution of these pixels can reach 140 eV at 6.4 keV at room temperature and shows a significant positive correlation with the readout noise. The accurate gain can also be derived individually for each of the pixels from its X-ray spectrum obtained. Variations of the gain values are found at a level of 0.56% statistically among the 30 thousand pixels in the areas studied. With the gain of each pixel determined accurately, a precise gain correction is performed pixel by pixel in these areas, in contrast to the standardized ensemble gain used in the conventional method. In this way, we could almost completely eliminate the degradation of energy resolutions caused by gain variations among pixels. As a result, the energy resolution at room temperature can be significantly improved to 124.6 eV at 4.5 keV and 140.7 eV at 6.4 keV. This pixel-by-pixel gain correction method can be applied to all kinds of CMOS sensors, and is expected to find interesting applications in X-ray spectroscopic observations in the future.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low readout noise. We tested the basic performance of a backside-illuminated (BSI) sCMOS sensor, which has a small pixel size of 6.5 um * 6.5 um. At a temperature of -20C, The readout noise is 1.6 e, the dark current is 0.5 e/pixel/s, and the energy resolution reaches 204.6 eV for single-pixel events. The effect of depletion depth on the sensor's performance was also examined, using three versions of the sensors with different deletion depths. We found that the sensor with a deeper depletion region can achieve a better energy resolution for events of all types of pixel splitting patterns, and has a higher efficiency in collecting photoelectrons produced by X-ray photons. We further study the effect of depletion depth on charge diffusion with a center-of-gravity (CG) model. Based on this work, a highly depleted sCMOS is recommended for applications of soft X-ray spectroscop.
分类： 天文学 >> 天文学 提交时间： 2023-02-19
摘要： In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low readout noise. We tested the basic performance of a backside-illuminated (BSI) sCMOS sensor, which has a small pixel size of 6.5 um * 6.5 um. At a temperature of -20C, The readout noise is 1.6 e, the dark current is 0.5 e/pixel/s, and the energy resolution reaches 204.6 eV for single-pixel events. The effect of depletion depth on the sensor's performance was also examined, using three versions of the sensors with different deletion depths. We found that the sensor with a deeper depletion region can achieve a better energy resolution for events of all types of pixel splitting patterns, and has a higher efficiency in collecting photoelectrons produced by X-ray photons. We further study the effect of depletion depth on charge diffusion with a center-of-gravity (CG) model. Based on this work, a highly depleted sCMOS is recommended for applications of soft X-ray spectroscop.
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