Subjects: Physics >> Nuclear Physics submitted time 2024-05-08
Abstract： Complementary Metal Oxide Semiconductor (CMOS) image sensor is gradually replacing CCD image sensor with small size, light weight, low power consumption, high integration and other characteristics. In the space radiation environment, it has protons, heavy particles, gamma rays, A large number of high-energy particles such as electrons, CMOS image sensors will be subject to the radiation effect of heavy ions and have permanent damage to them.This paper focuses on the mechanism of permanent damage of CMV4000 under heavy ion irradiation. CMV4000 images after heavy ion irradiation have obvious hot pixels (the dark current peak is several times higher than the dark current peak of other pixels usually shows that the gray value of the pixel is several times higher than that of other normal pixels), and the hot pixels will not disappear in the next frame image and subsequent images, so the hot pixels are not temporary.This paper also considers the comparison of image parameters of CMOS image sensor before and after irradiation and reveals the degradation mechanism of each parameter.
Subjects: Other Disciplines submitted time 2024-05-07
Abstract： Complementary Metal Oxide Semiconductor (CMOS) image sensor is gradually replacing CCD image sensor with small size, light weight, low power consumption, high integration and other characteristics. In the space radiation environment, it has protons, heavy particles, gamma rays, A large number of high-energy particles such as electrons, CMOS image sensors will be subject to the radiation effect of heavy ions and have permanent damage to them.This paper focuses on the mechanism of permanent damage of CMV4000 under heavy ion irradiation. CMV4000 images after heavy ion irradiation have obvious hot pixels (the dark current peak is several times higher than the dark current peak of other pixels usually shows that the gray value of the pixel is several times higher than that of other normal pixels), and the hot pixels will not disappear in the next frame image and subsequent images, so the hot pixels are not temporary.This paper also considers the comparison of image parameters of CMOS image sensor before and after irradiation and reveals the degradation mechanism of each parameter.
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