Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions

分类： 物理学 >> 凝聚态:结构、力学和热性能 提交时间： 2017-03-26

M. H. Cui Z. G. Wang L. L. Pang T. L. Shen C. F. Yao B. S. Li J. Y. Li X. Z. Cao P. Zhang J. R. Sun Y. B. Zhu Y. F. Li Y. B. Sheng

摘要： Tungsten has been selected as one of the potential candidate materials to cover some parts of the divertor in the future International Thermonuclear Experimental Reactor (ITER). The accumulation of defects and He induced by neutron irradiation and their impact on the mechanical properties of tungsten are of very importance. In this work, the high pure polycrystalline tungsten samples were implanted by 200 keV He+ with a fluence of 5016 He+/cm2 at temperatures of room temperature(RT), 200, 400 and 800oC. Vacancy-type defects were detected in all implanted samples by means of positron annihilation spectroscopy. Vacancy-type defects produced by He implantation exist in the damaged layer and are decorated by He atoms. With increasing implantation temperature, more He atoms fill in the vacancy-type defects and make for the formation of larger defects. The nano-hardness values were measured by nano-indentation technique. It is observed that implantation hardening occurred for all the implanted samples. With increasing implantation temperature from 200 to 800 oC, the change of the average hardness values which are lower than the value at RT has a tendency of enhancement for the shallower layer and degradation for the deeper layer. The hardness variations are discussed to be the pinning effects of the defects with different density or size.

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