分类: 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间: 2017-03-29
摘要: An indiumezinc-oxide (IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported. The devices exhibited a high current ON/OFF ratio of above 107, a high electron mobility of w14 cm2 V 1 s 1 and a low subthreshold swing of w80 mV/decade. The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface. Due to the dynamic modulation of the transient protons flux within the nanogranular SiO2 films, the channel current would be modified dynamically. Short-term synaptic plasticities, such as short-term potentiation and short- term depression, were mimicked on the proposed IZO synaptic transistor. The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices.
提交时间: 2017-05-02
摘要: For photovoltaic applications, low-cost SiNx-coated metallurgical grade silicon [MG-Si] wafers were used as substrates for polycrystalline silicon [poly-Si] thick films deposition at temperatures ranging from 640 to 880 degrees C by thermal chemical vapor
提交时间: 2017-05-02
摘要: Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/Z