Subjects: Engineering and technical science >> Physics Related Engineering and Technology Subjects: Engineering and technical science >> Technology of Instrument and Meter Subjects: Electronics and Communication Technology >> Electron Technology Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology submitted time 2024-05-06
Abstract： In this work, a design of transimpedance amplifier (TIA) for cryogenic scanning tunneling microscope (CryoSTM) is proposed. The TIA with the tip-sample component in CryoSTM is called as CryoSTM-TIA. With transimpedance gain of 1 Gohm, the bandwidth of the CryoSTM-TIA is larger than 200 kHz. The distinctive feature of the proposed CryoSTM-TIA is that its pre-amplifier is made of a single cryogenic high electron mobility transistor (HEMT), so the apparatus equivalent input noise current power spectral density at 100 kHz is lower than 6 (fA)2/Hz. In addition, bias-cooling method can be used to in-situ control the density of the frozen DX- centers in the HEMT doping area, changing its structure to reduce the device noises. With this apparatus, fast scanning tunneling spectra measurements with high-energy-resolution are capable to be performed. And, it is capable to measure scanning tunneling shot noise spectra (STSNS) at the atomic scale for various quantum systems, even if the shot noise is very low. It provides a powerful tool to investigate novel quantum states by measuring STSNS, such as detecting the existence of Majorana bound states in the topological quantum systems.
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Awaiting Review
Subjects: Electronics and Communication Technology >> Electron Technology Subjects: Engineering and technical science >> Technology of Instrument and Meter Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology Subjects: Physics >> Condensed Matter: Electronic Structure, Electrical, Magnetic, and Optical Properties submitted time 2024-05-06
Abstract： In this work, we design and fabricate the transimpedance Amplifier (TIA) following the design mentioned in Ref. 1 . In the TIA, the preamplifier (Pre-Amp) is made of a junction field effect transistor (JFET) that can work at 77 K. The post-amplifier (Post-Amp) is made of an operational amplifier. Cascade Pre-Amp and Post-Amp to form the inverting-amplifier. With a 1.13 Gohm feedback network, the gain of TIA is 1.13 Gohm and its bandwidth is about 97 kHz. The equivalent input noise voltage power spectral density of TIA is not more than 9 (nV)2/Hz at 10 kHz and 4 (nV)2/Hz at 50kHz, and its equivalent input noise current power spectral density is about 26 (fA)2/Hz at 10 kHz and 240 (fA)2/Hz at 50 kHz. The measured transport performances and noise performances of TIA are consistent with the simulations and calculations. As an example, the realization of TIA in this work verifies the design method and analytical calculations for the low-noise large-bandwidth high-gain TIA proposed in Ref. 1,2 . And, the TIA in this work is perfect for the cryogenic STM working at liquid nitrogen temperature.
Peer Review Status:Awaiting Review
Subjects: Electronics and Communication Technology >> Electron Technology Subjects: Engineering and technical science >> Physics Related Engineering and Technology Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology Subjects: Engineering and technical science >> Technology of Instrument and Meter submitted time 2023-05-01
Abstract： In this work, a design of large-bandwidth high-gain low-noise transimpedance amplifier (TIA) for scanning tunneling microscope (STM) is proposed. The simulations show that the proposed TIA has the bandwidth higher than 200 kHz, two orders of magnitude higher than those of conventional commercial TIAs for STM. At low frequencies, the noises of the proposed TIA are almost the same as the conventional commercial ones with the same transimpedance gain. At high frequencies, its calculated input equivalent noise voltage power spectral density (PSD) is 40 (nV)2/Hz and its input equivalent noise current PSD is 3.2 (fA)2/Hz at 10 kHz. The corresponding values are 23 (nV)2/Hz and 88 (fA)2/Hz at 100 kHz. The STM with the proposed TIA can meet the needs of fast high-quality STM imaging measurements and fast high-energy-resolution scanning tunneling spectra measurements for the low-conducting materials, such as complex organic systems and wide bandgap semiconductors.
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